• DocumentCode
    2255969
  • Title

    A Single Electron Artificial Neural Network (ANN) Majority Logic Gate (MLG)

  • Author

    Rehan, Sameh Ebrahim

  • Author_Institution
    Commun. & Electron. Eng. Dept., Mansoura Univ., Mansoura, Egypt
  • fYear
    2010
  • fDate
    19-22 Dec. 2010
  • Firstpage
    307
  • Lastpage
    310
  • Abstract
    The Single Electron Nano-Devices (SENDs) are attractive candidates for post-CMOS VLSI era mainly due to its very low power consumption. In this paper, the Linear Threshold Gate (LTG) SEND is reviewed. An Artificial Neural Network (ANN) Majority Logic Gate (MLG) with 3 inputs (MLG3) is proposed. The MLGs with three and four inputs are implemented using LTG and SET inverter SENDs. The detailed parameters for all used devices as well as the corresponding SIMON 2.0 simulation results of these MLGs are included.
  • Keywords
    logic gates; majority logic; neural nets; single electron transistors; SIMON 2.0 simulation; linear threshold gate; majority logic gate; single electron artificial neural network; single electron nano-device; Artificial Neural Network (ANN); Linear Threshold Gate (LTG); Majority Logic Gate (MLG); SIMON 2.0.; Single Electron (SE); Single Electron Box (SEB); Single Electron NanoDevices (SENDs); Single Electron Transistor (SET);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (ICM), 2010 International Conference on
  • Conference_Location
    Cairo
  • Print_ISBN
    978-1-61284-149-6
  • Type

    conf

  • DOI
    10.1109/ICM.2010.5696146
  • Filename
    5696146