DocumentCode
2255969
Title
A Single Electron Artificial Neural Network (ANN) Majority Logic Gate (MLG)
Author
Rehan, Sameh Ebrahim
Author_Institution
Commun. & Electron. Eng. Dept., Mansoura Univ., Mansoura, Egypt
fYear
2010
fDate
19-22 Dec. 2010
Firstpage
307
Lastpage
310
Abstract
The Single Electron Nano-Devices (SENDs) are attractive candidates for post-CMOS VLSI era mainly due to its very low power consumption. In this paper, the Linear Threshold Gate (LTG) SEND is reviewed. An Artificial Neural Network (ANN) Majority Logic Gate (MLG) with 3 inputs (MLG3) is proposed. The MLGs with three and four inputs are implemented using LTG and SET inverter SENDs. The detailed parameters for all used devices as well as the corresponding SIMON 2.0 simulation results of these MLGs are included.
Keywords
logic gates; majority logic; neural nets; single electron transistors; SIMON 2.0 simulation; linear threshold gate; majority logic gate; single electron artificial neural network; single electron nano-device; Artificial Neural Network (ANN); Linear Threshold Gate (LTG); Majority Logic Gate (MLG); SIMON 2.0.; Single Electron (SE); Single Electron Box (SEB); Single Electron NanoDevices (SENDs); Single Electron Transistor (SET);
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics (ICM), 2010 International Conference on
Conference_Location
Cairo
Print_ISBN
978-1-61284-149-6
Type
conf
DOI
10.1109/ICM.2010.5696146
Filename
5696146
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