DocumentCode :
2256018
Title :
Integrated CMOS resistance-to-period converter with parasitic capacitance evaluation
Author :
Di Carlo, C. ; De Marcellis, A. ; Stornelli, V. ; Ferri, G. ; Flammini, A. ; Depari, A.
Author_Institution :
Dept. of Electr. & Inf. Eng., Univ. of L´´Aquila, L´´Aquila, Italy
fYear :
2009
fDate :
24-27 May 2009
Firstpage :
1157
Lastpage :
1160
Abstract :
In this paper a novel and simple CMOS integrated interface is presented. The circuit is suitable for typical gas sensor applications being able to reveal: a) high resistive values over a wide-range (more than five orders of magnitude, ranging from hundreds of kilohm up to tens of gigohm); b) relatively low value capacitances (few picofarad) and their variations. The proposed front-end utilizes, as active blocks, operational amplifiers that have been implemented, at transistor level, as suitable OTA showing low input voltage offset and relatively high slew-rate characteristics. With respect to the most topologies in the literature, the proposed interface, based on an oscillating architecture, is very simple and allows to obtain good performances all over a high dynamic range without any initial calibration. System sensitivity has been set to 0.1 ms/MOmega. Experimental measurements, performed on chip, fabricated in a standard and low-cost CMOS technology (AMS 0.35 mum), have shown a good linearity confirming the front-end validity in a large frequency range.
Keywords :
CMOS integrated circuits; convertors; gas sensors; operational amplifiers; gas sensor application; high slew-rate characteristic; integrated CMOS resistance-to-period converter; low input voltage offset; low value capacitance; operational amplifier; parasitic capacitance evaluation; system sensitivity; transistor level; CMOS technology; Calibration; Circuits; Dynamic range; Frequency measurement; Gas detectors; Low voltage; Operational amplifiers; Parasitic capacitance; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
Type :
conf
DOI :
10.1109/ISCAS.2009.5117966
Filename :
5117966
Link To Document :
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