Improvement for bond pads discolor (sic) of CMOS image sensor products

Author

Chen, Chih-Hsing ; Huang, Hong-Wen ; Kuo, Chih-Chen ; Tsai, Hung-Jen

Author_Institution

Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

2001

fDate

2001

Firstpage

77

Lastpage

78

Abstract

The CMOS image sensor is covered with a color filter. Bond pads discoloration was found after the color filter process. SEM analysis showed metal loss of the bond pads, and residues in the discolored area. EDS results showed the residues contained mostly C and O elements, indicating photoresist residues. These defects caused package reliability problems based on a bondability test. Color filter processes are composed of multicolor photoresist layers. During several development processes most of the metal was lost, inducing metal film roughness and then causing photoresist residues on the bond pads. In order to improve bond pads discoloration, two methods for the color filter processes were evaluated: (1) decreased rework (development process) frequency, and (2) added bond pads protection, which showed some success

Keywords

CMOS image sensors; adhesion; colour; elemental semiconductors; integrated circuit reliability; photoresists; scanning electron microscopy; semiconductor device reliability; silicon; CMOS image sensor; EDS; SEM analysis; Si; bond pads discoloration; bond pads protection; bondability test; color filter process; development process; film roughness; metal loss; multicolor photoresist layers; package reliability; photoresist residues; rework frequency; Atherosclerosis; Bonding; CMOS image sensors; Color; Computational Intelligence Society; Filters; Frequency; Protection; Resists; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984442

Filename

984442