DocumentCode
2256079
Title
Design and layout of Schottky diodes in a standard CMOS process
Author
Rivera, Ben ; Baker, R. Jacob ; Melngailis, John
Author_Institution
Boise State Univ., ID, USA
fYear
2001
fDate
2001
Firstpage
79
Lastpage
82
Abstract
This paper addresses several concerns for increasing the frequency range in a Schottky diode detector circuit through a layout design solution. To increase the frequency and active range of the diode, reducing the series resistance was the first concern addressed, and this was accomplished by interdigitating the fingers of the Schottky and ohmic contacts. The capacitor was laid out in a manner to decrease charge lost to the substrate through parasitic substrate capacitance. For added accuracy, an averaging resistor/capacitor was added to isolate the Schottky diode detector circuit from the measuring circuit. With these improvements in the layout design, it is expected that the frequency and dynamic range of the Schottky diodes in the detector circuit will be extended further into the GHz range
Keywords
CMOS analogue integrated circuits; Schottky diodes; UHF integrated circuits; detector circuits; integrated circuit layout; GHz range; Schottky contacts; Schottky diode detector circuit; averaging resistor/capacitor; capacitor layout; circuit isolation; diode active range; diode frequency; interdigitated fingers; layout design solution; ohmic contacts; parasitic substrate capacitance; series resistance; standard CMOS process; CMOS process; Capacitors; Circuits; Contact resistance; Detectors; Fingers; Frequency; Ohmic contacts; Parasitic capacitance; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984443
Filename
984443
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