• DocumentCode
    2256079
  • Title

    Design and layout of Schottky diodes in a standard CMOS process

  • Author

    Rivera, Ben ; Baker, R. Jacob ; Melngailis, John

  • Author_Institution
    Boise State Univ., ID, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    79
  • Lastpage
    82
  • Abstract
    This paper addresses several concerns for increasing the frequency range in a Schottky diode detector circuit through a layout design solution. To increase the frequency and active range of the diode, reducing the series resistance was the first concern addressed, and this was accomplished by interdigitating the fingers of the Schottky and ohmic contacts. The capacitor was laid out in a manner to decrease charge lost to the substrate through parasitic substrate capacitance. For added accuracy, an averaging resistor/capacitor was added to isolate the Schottky diode detector circuit from the measuring circuit. With these improvements in the layout design, it is expected that the frequency and dynamic range of the Schottky diodes in the detector circuit will be extended further into the GHz range
  • Keywords
    CMOS analogue integrated circuits; Schottky diodes; UHF integrated circuits; detector circuits; integrated circuit layout; GHz range; Schottky contacts; Schottky diode detector circuit; averaging resistor/capacitor; capacitor layout; circuit isolation; diode active range; diode frequency; interdigitated fingers; layout design solution; ohmic contacts; parasitic substrate capacitance; series resistance; standard CMOS process; CMOS process; Capacitors; Circuits; Contact resistance; Detectors; Fingers; Frequency; Ohmic contacts; Parasitic capacitance; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984443
  • Filename
    984443