Title :
Preparation of phosphorous doping to beta-iron disilicide thin films and application for devices
Author :
Ehara, Takashi ; Nakagomi, Shinji ; Kokubun, Yoshihiro
Author_Institution :
Sch. of Sci. & Eng., Ishinomaki Senshu Univ., Miyagi, Japan
Abstract :
In the present work, preparation and device applications of phosphorous doped β-FeSi2 are described. Optical bandgap and conductivity of undoped and phosphorus doped β-FeSi2 thin films prepared by RF sputtering are measured. In addition, typical current-voltage characteristics of phosphorous-doped β-FeSi2 /p-type Si substrate heterojunctions are shown
Keywords :
electrical conductivity; energy gap; iron compounds; optical constants; phosphorus; semiconductor doping; semiconductor heterojunctions; semiconductor materials; semiconductor thin films; sputtered coatings; β-FeSi2/p-Si heterojunction; FeSi2-Si; FeSi2:P; RF sputtering; beta-iron disilicide thin film; current-voltage characteristics; direct band gap semiconductor; electrical conductivity; optical bandgap; phosphorous doping; Conductive films; Conductivity; Doping; Heterojunctions; Iron; Optical films; Photonic band gap; Sputtering; Substrates; Thin film devices;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984444
