DocumentCode
2256120
Title
Grain boundary controlled poly-Si TFT process employing selective si ion implantation and excimer laser annealing
Author
Lee, Min-Cheol ; Song, In-Hyuk ; Han, Min-Koo
Author_Institution
School of Electrical Eng., Seoul Nat. Univ., South Korea
fYear
2001
fDate
2001
Firstpage
85
Lastpage
88
Abstract
The authors report effects of selective Si+ ion implantation on the excimer laser annealing (ELA) of a-Si films. The Si + ion implantation may change the melting temperature of a-Si during ELA. In our experiment, lateral grains near the implanted region were observed and they were gown up to 1 μm while fine grains smaller than 1000 A were observed in the implanted region
Keywords
elemental semiconductors; grain boundaries; grain growth; ion implantation; laser beam annealing; leakage currents; silicon; thin film transistors; Si; TFT; amorphous semiconductor; excimer laser annealing; grain boundary; grain growth; leakage current; selective ion implantation; thin film transistor; Annealing; Grain boundaries; Grain size; Ion implantation; Laser transitions; Optical control; Process control; Semiconductor films; Temperature; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984445
Filename
984445
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