Title :
Grain boundary controlled poly-Si TFT process employing selective si ion implantation and excimer laser annealing
Author :
Lee, Min-Cheol ; Song, In-Hyuk ; Han, Min-Koo
Author_Institution :
School of Electrical Eng., Seoul Nat. Univ., South Korea
Abstract :
The authors report effects of selective Si+ ion implantation on the excimer laser annealing (ELA) of a-Si films. The Si + ion implantation may change the melting temperature of a-Si during ELA. In our experiment, lateral grains near the implanted region were observed and they were gown up to 1 μm while fine grains smaller than 1000 A were observed in the implanted region
Keywords :
elemental semiconductors; grain boundaries; grain growth; ion implantation; laser beam annealing; leakage currents; silicon; thin film transistors; Si; TFT; amorphous semiconductor; excimer laser annealing; grain boundary; grain growth; leakage current; selective ion implantation; thin film transistor; Annealing; Grain boundaries; Grain size; Ion implantation; Laser transitions; Optical control; Process control; Semiconductor films; Temperature; Thin film transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984445
