Title :
Optical anisotropy in InGaN/GaN quantum-well light-emitting diodes with a general crystal orientation
Author :
Park, S.-H. ; Ahn, D. ; Oh, J.E.
Author_Institution :
Dept. of Electron. Eng., Catholic Univ. of Daegu, Daegu
Abstract :
We have studied the crystal orientation effect on optical anisotropy in InGaN/GaN quantum-well light-emitting diodes. The absolute value of the anisotropy is found to increase rapidly with increasing crystal angle.
Keywords :
III-V semiconductors; crystal orientation; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; crystal angle; crystal orientation; nonMarkovian gain model; optical anisotropy; quantum-well light-emitting diodes; Anisotropic magnetoresistance; Gallium nitride; Geometrical optics; Light emitting diodes; Optical devices; Optical polarization; Optical saturation; Quantum well devices; Quantum wells; Spontaneous emission; (250.5230) Photoluminescence; (250.5590) Quantum-well,-wire, and-dot devices; (310.5448) Polarization, other optical properties;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
