Title :
Simulation of tunneling gate current in ultra-thin SOI MOSFETs
Author :
Fiegna, C. ; Abramo, A.
Author_Institution :
Dept. of Eng., Ferrara Univ., Italy
Abstract :
Numerical simulation is applied to analyze the tunneling gate current of ultra-thin single-gate SOI MOSFETs. The results of the self-consistent solution of 1D Schrodinger and Poisson equations show that, for very thin silicon layers, the gate tunneling currents depend on the thickness of the silicon region because this significantly affects the 2D subband structure in the inversion layer
Keywords :
MOSFET; Poisson equation; Schrodinger equation; interface states; inversion layers; numerical analysis; semiconductor device models; silicon-on-insulator; tunnelling; 2D subband structure; Poisson equation; Schrodinger equation; Si-SiO2; gate tunneling currents; inversion layer; numerical simulation; self-consistent solution; tunneling gate current simulation; ultrathin SOI MOSFET; Circuits; Effective mass; Electrons; MOSFETs; Numerical simulation; Poisson equations; Quantization; Schrodinger equation; Silicon; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984451
