A closed-form thermal noise model of SOI MOSFETs for low noise application

The authors present a closed-form thermal noise model by incorporating the energy transport theory for SOI MOSFETs. This incorporation easily solves the problems facing the present noise models and presents an accurate and analytical thermal noise expression. Meanwhile, a minimum noise value at a certain drain current (I_opt ) can be analytically calculated with this model, which is very crucial for the design of low-noise IC such as low noise amplifiers (LNA). Due to its simplicity, the model can be easily implemented into existing circuit simulators such as SPICE