Title :
A novel reaction-diffusion system based on minority-carrier transport in solid-state CMOS devices
Author :
Asai, Tetsuya ; Nishimiya, Yuusaku ; Amemiya, Yoshihito
Author_Institution :
Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan
Abstract :
We propose a novel silicon device for imitating autocatalytic and dissipative phenomena of reaction-diffusion (RD) systems, using the minority carriers in semiconductors as diffusion substances. Thus, the diffusion of chemical substances in the RD system is imitated by that of the minority carriers. The chemical reaction, which results in the change of the concentration of the substances, is imitated by a reaction device. Numerical simulations show that the proposed RD device can successfully produce propagating waves in the same way as natural RD systems. Our results indicate that the proposed RD device will be a useful tool for developing novel hardware based on the RD mechanism
Keywords :
MOSFET; catalysis; minority carriers; reaction-diffusion systems; semiconductor device models; CMOS devices; autocatalytic phenomena imitation; diffusion substances; dissipative phenomena imitation; dynamic behavior; lateral p-n-p-n diode; minority-carrier diffusion; minority-carrier transport; nonlinear chemical reaction; numerical simulations; pMOSFET; propagating waves; reaction device; reaction-diffusion system; substrate-depleted reaction; Capacitors; Chemicals; Electrons; Equivalent circuits; FETs; Semiconductor diodes; Silicon; Solid state circuits; Substrates; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984459