A new lateral conductivity modulated thyristor (LCMT)

Author

Lee, Y.S. ; Han, M.K. ; Choi, Y.I.

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2001

fDate

2001

Firstpage

145

Lastpage

147

Abstract

The purpose of our work is to report a new lateral MOS-gated thyristor, named LCMT, with increased safe operating area (SOA) and decreased turn-off characteristics. In the proposed LCMT, the SOA is improved due to increased current saturation capability by elimination of the parasitic thyristor. The turn-off time is decreased by employing a p+ diverter which successfully diverts holes during the turn-off process. Our experimental results show that the LCMT also exhibits positive-temperature characteristics. We compare the results for the LCMT with those of the widely used LIGBT (lateral insulated gate bipolar transistor)

Keywords

MOS-controlled thyristors; semiconductor device measurement; semiconductor device reliability; LCMT; current saturation capability; lateral MOS-gated thyristor; lateral conductivity modulated thyristor; p+ diverter; parasitic thyristor elimination; positive-temperature characteristics; safe operating area; turn-off characteristics; turn-off time; Anodes; Cathodes; Conductivity; Electric resistance; Electrons; Impedance; MOSFET circuits; Semiconductor optical amplifiers; Thyristors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984460

Filename

984460