Title :
Thin Ag film formation on thin SOI substrate
Author :
Iida, Shoji ; Tai, Toshiaki ; Hiraoka, Akihiko ; Noritake, Hideaki
Author_Institution :
Dept. of Electr. Eng. & Electron., Osaka Sangyo Univ., Japan
Abstract :
We show that much better results for forming a thin Ag film on an insulator can be obtained by using the direct continuous current flowing method (CCFM). This method is as follows: while forming a film on a substrate with a conventional deposition method, direct constant current is made to flow on the film via small electrodes. We report the results of using CCFM to form a thin Ag film onto an SiOx substrate and make a comparison with the ion beam deposition method
Keywords :
metallic thin films; nanotechnology; silicon-on-insulator; silver; surface structure; vapour deposition; Ag thin film formation; Ag-SiO2-Si; Si; Si(111) substrate; SiOx; SiOx substrate; direct continuous current flowing method; ion beam deposition; nano-scale electronic parts; small electrodes; smooth surface morphology; thin SOI substrate; Conductivity; Crystallization; Electrodes; Electrons; Insulation; Ion beams; Rough surfaces; Substrates; Surface morphology; Surface roughness;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984462
