Title :
Dual anode LIGBT on SOI substrates
Author :
Choi, S.P. ; Oh, J.K. ; Han, M.K. ; Choi, Y.I.
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
The device characteristics of a new SOI LIGBT, called the Dual Anode LIGBT, were investigated by 2-dimensional numerical simulation. It was shown that the negative differential resistance regime was completely eliminated without an additional process step and mask. The forward voltage drop of the DA-LIGBT at a current density of 100 A/cm 2, was 30% lower than that of the conventional SSA-LIGBT. This is attributed to the path of the electron carriers under the cathode region. The turn-off speed of the DA-LIGT is about one order faster than that of the LIGBT. The proposed DA-LIGBT may be an attractive device for power integrated circuits
Keywords :
insulated gate bipolar transistors; power transistors; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; 2D numerical simulation; SOI substrates; breakdown voltage; cathode region; current density; dual anode LIGBT; electron carrier path; forward voltage drop; negative differential resistance regime elimination; power integrated circuits; turn-off speed; Anodes; Breakdown voltage; Cathodes; Current density; Electric breakdown; Electrons; Immune system; Medical simulation; Nominations and elections; Solid modeling;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984463
