DocumentCode
2256523
Title
A behavioral model for the nonlinear on-resistance in sample-and-hold analog switches
Author
Prodanov, William ; Valle, Maurizio
Author_Institution
Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
Volume
1
fYear
2005
fDate
28 Aug.-2 Sept. 2005
Abstract
This paper presents a behavioral model of the nonlinear on-resistance in S&H analog switches. The model is suitable for analysis and design of low-voltage sampled data systems. Simulated results using the ATMEL 0.24μm CMOS process are shown to validate the model. The advanced-compact-MOSFET model (ACM), a symmetric drain-to-source model, valid in the whole inversion level regime of MOS transistors, is used as reference.
Keywords
CMOS integrated circuits; MOSFET; integrated circuit modelling; sample and hold circuits; 0.24 micron; CMOS process; MOS transistors; advanced-compact-MOSFET model; behavioral model; drain-to-source model; inversion level regime; low-voltage sampled data systems; nonlinear on-resistance; sample-and-hold analog switches; CMOS process; CMOS technology; Circuits; Clocks; Design methodology; MOSFETs; SPICE; Sampled data systems; Semiconductor device modeling; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuit Theory and Design, 2005. Proceedings of the 2005 European Conference on
Print_ISBN
0-7803-9066-0
Type
conf
DOI
10.1109/ECCTD.2005.1522922
Filename
1522922
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