DocumentCode
2256546
Title
The problem originating from the grain boundaries in dielectric storage capacitors
Author
Lee, Jang-Sik ; Joo, Seung-Ki
Author_Institution
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
fYear
2001
fDate
2001
Firstpage
165
Lastpage
168
Abstract
In this work, we investigated the grain boundary effects directly using grain-location controlled PZT thin films. The authors show the I-V characteristics according to the length of the grain boundary. With increase of the grain boundary length from 0 μm to 16 μm, drastic increase of the leakage current and decrease of the breakdown field were observed
Keywords
electric breakdown; ferroelectric capacitors; ferroelectric thin films; grain boundaries; lead compounds; I-V characteristics; PZT; PbZrO3TiO3; breakdown field; dielectric storage capacitors; ferroelectric capacitors; grain boundaries; grain-location controlled PZT thin films; leakage current; Capacitors; Crystallization; Degradation; Dielectric thin films; Electric breakdown; Electrodes; Grain boundaries; Material storage; Random access memory; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984466
Filename
984466
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