Title :
Growth of InP substrate crystals by the vertical gradient freeze technique
Author :
Sahr, U. ; Müller, G.
Author_Institution :
Crystal Growth Lab., Univ. Erlangen, Germany
fDate :
30 June-5 July 2002
Abstract :
InP substrate crystals are grown by different methods. The VGF-technology provides the best conditions to produce high quality crystals. In the 80 \´s InP-crystals were grown by the VGF-technique for the first time. Today the VGF-technique is a commercial process and semi-insulating substrates up to 6" in diameter are available. At the Crystal Growth Laboratory in Erlangen the VGF-growth of InP is investigated. VGF-growth facilities were developed by the aid of computer simulation. The grown crystals exhibit low dislocation density and high uniformity.
Keywords :
III-V semiconductors; dislocation density; indium compounds; semiconductor growth; zone melting; 6 inch; InP; InP substrate crystal; VGF growth; computer simulation; dislocation density; semi-insulating substrate; vertical gradient freeze; Application software; Computer simulation; Crystals; Design optimization; Indium phosphide; Laboratories; Numerical models; Substrates; Temperature; Thermal stresses;
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
DOI :
10.1109/SIM.2002.1242716
