Title :
Inspection of residual strain in GaAs single crystal as standard ingot form
Author :
Yamada, Masayoshi ; Chu, Tao
Author_Institution :
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
fDate :
30 June-5 July 2002
Abstract :
Scanning infrared polariscope (SIRP) measurements have been made in LEC- and VGF-grown GaAs ingot crystals. It is demonstrated from the SIRP measurements that residual strain can be inspected as standard ingot form before slicing to wafer, although it is difficult for us to evaluate the absolute value of residual strain.
Keywords :
III-V semiconductors; gallium arsenide; ingots; inspection; internal stresses; nondestructive testing; polarimetry; strain measurement; GaAs; LEC grown GaAs crystal; VGF grown GaAs crystal; ingot; residual strain; scanning infrared polariscope; Capacitive sensors; Crystallization; Gallium arsenide; Inspection; Measurement standards; Optical polarization; Optical surface waves; Rough surfaces; Strain measurement; Surface roughness;
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
DOI :
10.1109/SIM.2002.1242717
