DocumentCode
2256637
Title
Inspection of residual strain in GaAs single crystal as standard ingot form
Author
Yamada, Masayoshi ; Chu, Tao
Author_Institution
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
fYear
2002
fDate
30 June-5 July 2002
Firstpage
19
Lastpage
22
Abstract
Scanning infrared polariscope (SIRP) measurements have been made in LEC- and VGF-grown GaAs ingot crystals. It is demonstrated from the SIRP measurements that residual strain can be inspected as standard ingot form before slicing to wafer, although it is difficult for us to evaluate the absolute value of residual strain.
Keywords
III-V semiconductors; gallium arsenide; ingots; inspection; internal stresses; nondestructive testing; polarimetry; strain measurement; GaAs; LEC grown GaAs crystal; VGF grown GaAs crystal; ingot; residual strain; scanning infrared polariscope; Capacitive sensors; Crystallization; Gallium arsenide; Inspection; Measurement standards; Optical polarization; Optical surface waves; Rough surfaces; Strain measurement; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN
0-7803-7418-5
Type
conf
DOI
10.1109/SIM.2002.1242717
Filename
1242717
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