An analytical model for SiC MESFETs

Author

Murray, S.P. ; Roenker, K.P.

Author_Institution

Xetron Corp., Cincinnati, OH, USA

fYear

2001

fDate

2001

Firstpage

195

Lastpage

198

Abstract

An improved analytical model for simulating the performance of SiC MESFETs has been developed for use in device design for high frequency, high power applications. The model is based on a two-dimensional analysis of the charge distribution under the gate and incorporates a field-dependent mobility, velocity saturation and charge buildup in the channel. The model is used to generate the large signal current-voltage characteristics of the device and transconductance, output conductance and capacitances for a small signal model

Keywords

Schottky gate field effect transistors; power MESFET; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; SiC MESFETs; analytical model; capacitances; charge buildup; charge distribution; device design; field-dependent mobility; gate; high frequency high power applications; large signal current-voltage characteristics; output conductance; small signal model; transconductance; two-dimensional analysis; velocity saturation; Analytical models; Computational modeling; Computer science; Computer simulation; Electron mobility; Frequency; Gallium arsenide; MESFETs; Silicon carbide; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984473

Filename

984473