Title :
An analytical model for SiC MESFETs
Author :
Murray, S.P. ; Roenker, K.P.
Author_Institution :
Xetron Corp., Cincinnati, OH, USA
Abstract :
An improved analytical model for simulating the performance of SiC MESFETs has been developed for use in device design for high frequency, high power applications. The model is based on a two-dimensional analysis of the charge distribution under the gate and incorporates a field-dependent mobility, velocity saturation and charge buildup in the channel. The model is used to generate the large signal current-voltage characteristics of the device and transconductance, output conductance and capacitances for a small signal model
Keywords :
Schottky gate field effect transistors; power MESFET; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; SiC MESFETs; analytical model; capacitances; charge buildup; charge distribution; device design; field-dependent mobility; gate; high frequency high power applications; large signal current-voltage characteristics; output conductance; small signal model; transconductance; two-dimensional analysis; velocity saturation; Analytical models; Computational modeling; Computer science; Computer simulation; Electron mobility; Frequency; Gallium arsenide; MESFETs; Silicon carbide; Thermal conductivity;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984473
