Title :
Blue and yellow electroluminescence of MOSLED made on Si-rich SiOx grown by PECVD with detuning buried Si nanoclusters size
Author :
Chang, Chung-Hsiang ; Lin, Gong-Ru
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
Blue and yellow electroluminescence of MOSLEDs made on Si-rich SiOx with buried Si nanocrystals of different sizes controlled with minimum hydrogen passivation are demonstrated by PECVD at different N2O/SiH4 ratio and total fluence.
Keywords :
MIS structures; buried layers; electroluminescence; elemental semiconductors; light emitting diodes; nanostructured materials; passivation; plasma CVD; silicon; silicon compounds; MOSLED; PECVD; SiOx-Si; blue electroluminescence; buried nanoclusters; hydrogen passivation; light emitting diode; nanocrystals; yellow electroluminescence; Annealing; Electroluminescence; Electroluminescent devices; Light emitting diodes; Nanocrystals; Photonic band gap; Plasma temperature; Semiconductor films; Silicon; Substrates; (040.6040) Silicon; (160.4236) Nanomaterials; (250.5230) photoluminescence;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
