• DocumentCode
    2256671
  • Title

    Blue and yellow electroluminescence of MOSLED made on Si-rich SiOx grown by PECVD with detuning buried Si nanoclusters size

  • Author

    Chang, Chung-Hsiang ; Lin, Gong-Ru

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
  • fYear
    2008
  • fDate
    4-9 May 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Blue and yellow electroluminescence of MOSLEDs made on Si-rich SiOx with buried Si nanocrystals of different sizes controlled with minimum hydrogen passivation are demonstrated by PECVD at different N2O/SiH4 ratio and total fluence.
  • Keywords
    MIS structures; buried layers; electroluminescence; elemental semiconductors; light emitting diodes; nanostructured materials; passivation; plasma CVD; silicon; silicon compounds; MOSLED; PECVD; SiOx-Si; blue electroluminescence; buried nanoclusters; hydrogen passivation; light emitting diode; nanocrystals; yellow electroluminescence; Annealing; Electroluminescence; Electroluminescent devices; Light emitting diodes; Nanocrystals; Photonic band gap; Plasma temperature; Semiconductor films; Silicon; Substrates; (040.6040) Silicon; (160.4236) Nanomaterials; (250.5230) photoluminescence;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-859-9
  • Type

    conf

  • Filename
    4572351
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2256671