Title :
Ohmic contacts to n-type AlGaN and nitride HEMT epilayers
Author :
Wang, P.K. ; Schweitz, K.O. ; Pribicko, T.G. ; Mohney, S.E. ; Pophristic, M. ; Gotthold, D.
Author_Institution :
Dept. of Mater. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
The authors examine the influence of a variety of processing variables on the specific contact resistance of Ti/Al/Pt/Au ohmic contacts to n-type AlGaN, and we study the effect of replacing Ti with V when fabricating ohmic contacts to n-type AlGaN/GaN HEMT epilayers. The replacement of Ti with V allows the annealing temperature for formation of low resistance ohmic contacts to be decreased by 150 °C
Keywords :
III-V semiconductors; aluminium; aluminium compounds; annealing; contact resistance; gallium compounds; gold; high electron mobility transistors; ohmic contacts; platinum; semiconductor epitaxial layers; titanium; vanadium; wide band gap semiconductors; AlGaN-GaN; HEMT epilayers; Ti-Al-Pt-Au; Ti/Al/Pt/Au; V-Al-Pt-Au; V/Al/Pt/Au; annealing temperature; n-AlGaN; n-AlGaN/GaN; ohmic contacts; processing variables; specific contact resistance; Aluminum gallium nitride; Annealing; Contact resistance; Electrical resistance measurement; Gallium nitride; Gold; HEMTs; Materials science and technology; Ohmic contacts; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984474
