• DocumentCode
    2256683
  • Title

    Photocurrent and photoluminescence in Fe-doped InP

  • Author

    Alvarez, A. ; Gonzalez, M.A. ; Avella, M. ; Jimenez, J. ; Fornari, R.

  • Author_Institution
    Dept. Fiscia de la Mater. Condensada, Valladolid Univ., Spain
  • fYear
    2002
  • fDate
    30 June-5 July 2002
  • Firstpage
    27
  • Lastpage
    30
  • Abstract
    Photoluminescence (PL) and photocurrent (PC) signals in Fe-doped InP were modelled in order to understand the origin of the contrast in PL and PC maps in relation to the Fe distribution. The PL intensity is shown to be controlled by [Fe3+]*[Fe2+] while the PC intensity by the compensation ratio, [FeIn]/[Fe2+].
  • Keywords
    III-V semiconductors; impurity distribution; indium compounds; iron; photoconductivity; photoluminescence; Fe distribution; Fe doped Inp; InP:Fe; PL; photocurrent; photoluminescence; Conductivity; Doping; Indium phosphide; Iron; Laser excitation; Luminescence; Microelectronics; Photoconductivity; Photoluminescence; Spontaneous emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
  • Print_ISBN
    0-7803-7418-5
  • Type

    conf

  • DOI
    10.1109/SIM.2002.1242719
  • Filename
    1242719
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2256683