DocumentCode :
2256683
Title :
Photocurrent and photoluminescence in Fe-doped InP
Author :
Alvarez, A. ; Gonzalez, M.A. ; Avella, M. ; Jimenez, J. ; Fornari, R.
Author_Institution :
Dept. Fiscia de la Mater. Condensada, Valladolid Univ., Spain
fYear :
2002
fDate :
30 June-5 July 2002
Firstpage :
27
Lastpage :
30
Abstract :
Photoluminescence (PL) and photocurrent (PC) signals in Fe-doped InP were modelled in order to understand the origin of the contrast in PL and PC maps in relation to the Fe distribution. The PL intensity is shown to be controlled by [Fe3+]*[Fe2+] while the PC intensity by the compensation ratio, [FeIn]/[Fe2+].
Keywords :
III-V semiconductors; impurity distribution; indium compounds; iron; photoconductivity; photoluminescence; Fe distribution; Fe doped Inp; InP:Fe; PL; photocurrent; photoluminescence; Conductivity; Doping; Indium phosphide; Iron; Laser excitation; Luminescence; Microelectronics; Photoconductivity; Photoluminescence; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
Type :
conf
DOI :
10.1109/SIM.2002.1242719
Filename :
1242719
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2256683
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