• DocumentCode
    2256691
  • Title

    I-V characteristics of polarization-induced barriers in AlGaN/GaN heterostructures

  • Author

    Jia, L. ; Keogh, D. ; Yu, L.S. ; Lau, S.S. ; Yu, E.T. ; Asbeck, P.M. ; Miraglia, P. ; Roskowski, A. ; Davis, R.F.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    201
  • Lastpage
    204
  • Abstract
    I-V characteristics of the GaN/AlGaN/GaN heterostructures show that the barrier behaves like a Schottky barrier with controllable barrier height. Low temperature I-V measurement shows that a defect-assisted tunneling mechanism may dominate the current transport across the barrier
  • Keywords
    III-V semiconductors; Schottky barriers; aluminium compounds; gallium compounds; semiconductor heterojunctions; tunnelling; wide band gap semiconductors; GaN-AlGaN-GaN; GaN/AlGaN/GaN heterostructures; I-V characteristics; Schottky barrier; controllable barrier height; current transport; defect-assisted tunneling mechanism; polarization-induced barriers; Aluminum gallium nitride; Conducting materials; Dielectric constant; Electrons; Energy barrier; Gallium nitride; Microwave transistors; Optical polarization; Power engineering and energy; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984475
  • Filename
    984475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2256691