Gain compression in GaN HEMT amplifiers

Author

Ahmed, Arif ; Islam, Syed S. ; Anwar, A.F.M.

Author_Institution

Electr. & Comput. Eng., Connecticut Univ., Storrs, CT, USA

fYear

2001

fDate

2001

Firstpage

205

Lastpage

208

Abstract

Volterra series analysis is used to determine linear and nonlinear gain, output power of a GaN HEMT amplifier. Gain compression defined as the difference between linear and nonlinear gain is reported for varying temperatures. Measured 1-dB gain compression of 17.5 dBm for a 1×500 μm Al_0.15Ga_0.85N/GaN HEMT at 300 K and at 2 GHz is in excellent agreement with the calculated value of 17 dBm. With the operating frequency increasing from 1 GHz to 6 GHz the 1-dB gain compression point decreases from 20.5 dBm to 13.8 dBm at 300 K. At 2 GHz the 1-dB gain compression point decreases from 17.5 dBm at 300 K to 6.5 dBm at 600 K

Keywords

HF amplifiers; III-V semiconductors; Volterra series; aluminium compounds; gallium compounds; high electron mobility transistors; 1 micron; 1 to 6 GHz; 300 K; 500 micron; 600 K; Al_0.15Ga_0.85N-GaN; HEMT amplifiers; Volterra series analysis; gain compression; linear gain; nonlinear gain; output power; Frequency; Gain measurement; Gallium nitride; HEMTs; Power amplifiers; Power generation; Silicon carbide; Temperature; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984476

Filename

984476