Title :
GaAs for X-imaging and particle detectors
Author :
Ayzenshtat, A.I. ; Budnitsky, D.L. ; Koretskaya, O.B. ; Okaevich, L.S. ; Novikov, V.A. ; Potapov, A.I. ; Tolbanov, O.P. ; Tyazhev, A.V. ; Vorobiev, A.P.
Author_Institution :
Sci. & Production State Enterprise, Semicond. Dev. Res. Inst., Tomsk, Russia
fDate :
30 June-5 July 2002
Abstract :
Among prospect semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to it high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-insulating layers (SI-GaAs) fabricated by means of different technological methods is given in this work. The main parameters of detector structures and multi-element detectors based on SI-GaAs are presented.
Keywords :
III-V semiconductors; X-ray imaging; carrier mobility; gallium arsenide; particle detectors; semiconductor thin films; wide band gap semiconductors; GaAs; GaAs compounds; X-imaging detectors; carrier mobility; detector structures; electrical properties; ionizing radiation detectors; multielement detectors; particle detectors; physical properties; semiconductor materials; semiinsulating layers; wide band gap; Conductivity; Electron mobility; Fabrication; Gallium arsenide; Leak detection; Leakage current; Photonic band gap; Radiation detectors; Semiconductor materials; Temperature;
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
DOI :
10.1109/SIM.2002.1242721
