GaAs for X-imaging and particle detectors

Author

Ayzenshtat, A.I. ; Budnitsky, D.L. ; Koretskaya, O.B. ; Okaevich, L.S. ; Novikov, V.A. ; Potapov, A.I. ; Tolbanov, O.P. ; Tyazhev, A.V. ; Vorobiev, A.P.

Author_Institution

Sci. & Production State Enterprise, Semicond. Dev. Res. Inst., Tomsk, Russia

fYear

2002

fDate

30 June-5 July 2002

Firstpage

35

Lastpage

38

Abstract

Among prospect semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to it high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-insulating layers (SI-GaAs) fabricated by means of different technological methods is given in this work. The main parameters of detector structures and multi-element detectors based on SI-GaAs are presented.

Keywords

III-V semiconductors; X-ray imaging; carrier mobility; gallium arsenide; particle detectors; semiconductor thin films; wide band gap semiconductors; GaAs; GaAs compounds; X-imaging detectors; carrier mobility; detector structures; electrical properties; ionizing radiation detectors; multielement detectors; particle detectors; physical properties; semiconductor materials; semiinsulating layers; wide band gap; Conductivity; Electron mobility; Fabrication; Gallium arsenide; Leak detection; Leakage current; Photonic band gap; Radiation detectors; Semiconductor materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on

Print_ISBN

0-7803-7418-5

Type

conf

DOI

10.1109/SIM.2002.1242721

Filename

1242721