RF performance of GaN/AlGaN HEMT amplifier

Author

Anwar, A.F.M. ; Islam, Syed S.

Author_Institution

Electr. & Comput. Eng., Connecticut Univ., Storrs, CT, USA

fYear

2001

fDate

2001

Firstpage

209

Lastpage

212

Abstract

An exact time-domain technique to analyze the RF performance considering the thermal effects of the GaN/AlGaN HEMT amplifier is reported. The maximum output power of 28 dBm at a power gain of 8.2 dB, and power added efficiency (PAE) of 19% with low frequency gain of 11 dB at an operating frequency of 2 GHz, reported for a 1 μm×500 μm Al_0.15Ga_0.85N/GaN HEMT are in excellent agreement with theoretical calculations. The calculated third-order intermodulation (IM3) and carrier-to-IM3 ratio are -16.5 dB and 13.5 dBc, respectively, at the peak operating power/PAE at 2 GHz. With output power decreasing to 16 dBm at 2 GHz the above quantities are -37 dB and 22.5 dBc, respectively

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; intermodulation; radiofrequency amplifiers; time-domain analysis; wide band gap semiconductors; 1 micron; 11 dB; 19 percent; 2 GHz; 500 micron; 8.2 dB; Al_0.15Ga_0.85N-GaN; GaN-AlGaN; GaN/AlGaN HEMT amplifier; RF performance; carrier/IM3 ratio; exact time-domain technique; low frequency gain; maximum output power; operating frequency; power added efficiency; power gain; thermal effects; third-order intermodulation; Aluminum gallium nitride; Gain; Gallium nitride; HEMTs; Performance analysis; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984477

Filename

984477