Unified drain current model for independently driven double gate MOSFETs

A generic surface potential based current voltage (I-V) model for heavily doped asymmetric Double Gate MOSFET is presented. The model is derived from the 1-D Poisson equation with all the charge terms included and the channel potential is solved for the asymmetric operation of DG MOSFET based on the Newton Raphson Iterative method. A non charge sheet based drain current model based on the Pao-Sah´s double integral method is formulated in terms of front and back gate surface potentials at the source and drain end. The model is able to clearly show the dependence of the front and back surface potentials and the drain current on the terminal voltages, gate oxide thicknesses, channel doping concentrations and the Silicon body thickness and a good agreement is observed with the 2-D numerical simulation results.