• DocumentCode
    2256737
  • Title

    Characterization of interface traps in subthreshold regions of implanted 6H- and 4H-SiC MOSFETs

  • Author

    Zheng, Yu ; Softic, Amela ; White, Marvin H.

  • Author_Institution
    Sherman Fairchild Center for Solid State Studies, Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    213
  • Lastpage
    215
  • Abstract
    In this paper the interface trap densities (Dit) of 6H- and 4H-SiC MOSFETs in the subthreshold region have been studied. Interface trap densities in this region were extracted as a function of trap energy (ET) from the transfer characteristics. We show these interface trap densities increase exponentially approaching the onset of strong inversion for both polytypes, and Dit(ET ) is higher in 4H than in 6H through the subthreshold region. These results are consistent with previous reports
  • Keywords
    MIS structures; MOSFET; electron traps; interface states; polymorphism; silicon compounds; wide band gap semiconductors; 4H-SiC; 6H-SiC; MOSFET; SiC; interface trap density; polytypes; strong inversion; subthreshold region; transfer characteristics; trap energy; Capacitance measurement; Capacitance-voltage characteristics; Density measurement; Doping; Fabrication; Hall effect; MOS devices; MOSFETs; Silicon carbide; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984478
  • Filename
    984478
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2256737