A dual-band voltage-controlled oscillator for SONET OC-768 application

Author

Weng, Ro-Min ; Hsiao, Ting-Jui ; Liu, Chun-Yu

Author_Institution

Dept. of Electr. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan

fYear

2009

fDate

24-27 May 2009

Firstpage

1297

Lastpage

1300

Abstract

A dual-band voltage-controlled oscillator (VCO) with low phase noise is presented to be operated at 20 GHz and 40 GHz for SONET OC-768 optical transmission systems. The push-push technique and a bottom-series coupling inductor are employed to achieve dual-band and low phase noise. The phase noises at 1 MHz offset frequency are -108.42 dBc/Hz and -102.40 dBc/Hz at 20 GHz and 40 GHz, respectively. The figure of merit (FOM) is -186.4 which is sufficient to meet the jitter specification of the system. The proposed VCO is fabricated with tsmc 0.13 mum CMOS process. The power consumption of the chip core is 5.4 mW with a 1.2 V supply voltage.

Keywords

CMOS integrated circuits; SONET; microwave integrated circuits; microwave oscillators; millimetre wave integrated circuits; millimetre wave oscillators; phase noise; voltage-controlled oscillators; CMOS process; SONET OC-768 application; bottom-series coupling inductor; dual-band voltage-controlled oscillator; figure of merit; frequency 1 MHz; frequency 20 GHz; frequency 40 GHz; phase noise; push-push technique; size 0.13 mum; voltage 1.2 V; CMOS process; Couplings; Dual band; Frequency; Inductors; Jitter; Optical noise; Phase noise; SONET; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on

Conference_Location

Taipei

Print_ISBN

978-1-4244-3827-3

Electronic_ISBN

978-1-4244-3828-0

Type

conf

DOI

10.1109/ISCAS.2009.5118001

Filename

5118001