Title :
A dual-band voltage-controlled oscillator for SONET OC-768 application
Author :
Weng, Ro-Min ; Hsiao, Ting-Jui ; Liu, Chun-Yu
Author_Institution :
Dept. of Electr. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan
Abstract :
A dual-band voltage-controlled oscillator (VCO) with low phase noise is presented to be operated at 20 GHz and 40 GHz for SONET OC-768 optical transmission systems. The push-push technique and a bottom-series coupling inductor are employed to achieve dual-band and low phase noise. The phase noises at 1 MHz offset frequency are -108.42 dBc/Hz and -102.40 dBc/Hz at 20 GHz and 40 GHz, respectively. The figure of merit (FOM) is -186.4 which is sufficient to meet the jitter specification of the system. The proposed VCO is fabricated with tsmc 0.13 mum CMOS process. The power consumption of the chip core is 5.4 mW with a 1.2 V supply voltage.
Keywords :
CMOS integrated circuits; SONET; microwave integrated circuits; microwave oscillators; millimetre wave integrated circuits; millimetre wave oscillators; phase noise; voltage-controlled oscillators; CMOS process; SONET OC-768 application; bottom-series coupling inductor; dual-band voltage-controlled oscillator; figure of merit; frequency 1 MHz; frequency 20 GHz; frequency 40 GHz; phase noise; push-push technique; size 0.13 mum; voltage 1.2 V; CMOS process; Couplings; Dual band; Frequency; Inductors; Jitter; Optical noise; Phase noise; SONET; Voltage-controlled oscillators;
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
DOI :
10.1109/ISCAS.2009.5118001
