DocumentCode :
2256759
Title :
Avalanche breakdown of 4H-SiC diodes with edge terminated by a 2° positive bevel
Author :
Yan, Feng ; Qin, Chao ; Zhao, Jian H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fYear :
2001
fDate :
2001
Firstpage :
216
Lastpage :
219
Abstract :
The authors present attempts toward obtaining impact ionization rates of both holes and electrons. Diodes terminated by a 2° positive bevel have been fabricated with the anode area ranging from 10 4 μm2 to 3x105 μm2. The breakdown voltages were measured. The multiplication factors of electrons and holes have been calculated based on the photocurrent measured at 230 nm and 370 nm. The impact ionization rates of holes and electrons are calculated from the multiplication results
Keywords :
avalanche breakdown; avalanche diodes; avalanche photodiodes; impact ionisation; photoconductivity; silicon compounds; wide band gap semiconductors; 2° positive bevel edge termination; 230 nm; 370 nm; 4H-SiC diodes; SiC; anode area; avalanche breakdown; breakdown voltage; electron impact ionization rate; hole impact ionization rate; multiplication factors; photocurrent; Anodes; Avalanche breakdown; Diodes; Doping; Electric breakdown; Etching; Fasteners; Impact ionization; Silicon carbide; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
Type :
conf
DOI :
10.1109/ISDRS.2001.984479
Filename :
984479
Link To Document :
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