Title :
Avalanche breakdown of 4H-SiC diodes with edge terminated by a 2° positive bevel
Author :
Yan, Feng ; Qin, Chao ; Zhao, Jian H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
The authors present attempts toward obtaining impact ionization rates of both holes and electrons. Diodes terminated by a 2° positive bevel have been fabricated with the anode area ranging from 10 4 μm2 to 3x105 μm2. The breakdown voltages were measured. The multiplication factors of electrons and holes have been calculated based on the photocurrent measured at 230 nm and 370 nm. The impact ionization rates of holes and electrons are calculated from the multiplication results
Keywords :
avalanche breakdown; avalanche diodes; avalanche photodiodes; impact ionisation; photoconductivity; silicon compounds; wide band gap semiconductors; 2° positive bevel edge termination; 230 nm; 370 nm; 4H-SiC diodes; SiC; anode area; avalanche breakdown; breakdown voltage; electron impact ionization rate; hole impact ionization rate; multiplication factors; photocurrent; Anodes; Avalanche breakdown; Diodes; Doping; Electric breakdown; Etching; Fasteners; Impact ionization; Silicon carbide; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984479