Title :
Electrical characterization of hydrogenated n-type AlGaN
Author :
Seghier, Djelloul ; Gislason, Hafidi
Author_Institution :
Sci. Inst., Iceland Univ., Reykjavik, Iceland
fDate :
30 June-5 July 2002
Abstract :
We investigated two series of MOCVD-grown AlxGa1-xN samples with Al compositions x=0.1 and x=0.3 before and after hydrogenation. Shallow and deep centers were investigated using electrical characterization methods. We observe a dominant donor level with a larger binding energy in the sample with x=0.3. We also observe interface defects between An and the AlGaN layer which become more significant with increasing x. Their presence is related to the high Al mole fraction which creates potential fluctuations at the surface of the sample. Hydrogenation results in (i) a partial passivation of the shallow donors, (ii) disappearance of interface defects, and (iii) creation of a new shallow donor center.
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; binding energy; current fluctuations; gallium compounds; hydrogenation; impurity states; passivation; semiconductor epitaxial layers; wide band gap semiconductors; Al mole fraction; AlGaN; MOCVD-growth; binding energy; deep centers; donor level; hydrogenation; interface defects; n-type AlGaN layer; passivation; potential fluctuations; shallow donor center; Aluminum gallium nitride; Artificial intelligence; Capacitance measurement; Density measurement; Fluctuations; Gold; Passivation; Plasma measurements; Plasma temperature; Temperature distribution;
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
DOI :
10.1109/SIM.2002.1242724