Title :
CMOS SFFDS PA with coupled transformer for high power RF applications
Author :
Luque, Y. ; Kerhervé, E. ; Deltimple, N. ; Belot, D.
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
Abstract :
This paper presents a 65 nm CMOS power amplifier (PA) using a coupled transformer. The PA is based on an original structure, called stacked folded fully differential structure (SFFDS). It is applied to the UMTS W-CDMA standard. The parallel SFFDS power amplifier provides 30.5 dBm of output power with 20% of power added efficiency (PAE) at 1.95 GHz. The output compression point (OCP1) is 27.5 dBm and the PA is linear up to 24 dBm in order to meet the maximum output power required by the UMTS W-CDMA standard.
Keywords :
CMOS integrated circuits; power amplifiers; power transformers; radiofrequency integrated circuits; telecommunication standards; CMOS SFFDS; CMOS power amplifier; UMTS W-CDMA standard; coupled transformer; frequency 1.95 GHz; output compression point; power added efficiency; size 65 nm; stacked folded fully differential structure; 3G mobile communication; CMOS technology; Circuit topology; High power amplifiers; Inductance; Multiaccess communication; Network topology; Power amplifiers; Power generation; Radio frequency;
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
DOI :
10.1109/ISCAS.2009.5118005
