Title :
Distortion properties of gallium arsenide and silicon RF and microwave switches
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., North Dartmouth, MA, USA
Abstract :
An important parameter for RF and microwave system design is the prediction of distortion produced by system components. This paper presents the results of a study on the distortion produced by GaAs and Si RF and microwave switches. The results presented will provide RF and microwave circuit designers with information needed to help decide which switch to use for a specific switching application.
Keywords :
III-V semiconductors; electric distortion; elemental semiconductors; field effect transistor switches; gallium arsenide; microwave diodes; p-i-n diodes; power semiconductor diodes; power semiconductor switches; silicon; GaAs; GaAs switches; RF switches; Si; Si switches; circuit designers; distortion; microwave switches; system components; Charge carrier lifetime; Communication switching; Diodes; Gallium arsenide; Impedance; Nonlinear distortion; Radio frequency; Silicon; Switches; Switching circuits;
Conference_Titel :
Wireless Applications Digest, 1997., IEEE MTT-S Symposium on Technologies for
Conference_Location :
Vancouver, BC, Canada
Print_ISBN :
0-7803-3318-7
DOI :
10.1109/MTTTWA.1997.595132
