Microanalysis of Ni/Si ohmic contacts to n-SiC

Author

Scire, J. ; Wagstaffe, D. ; Prenatt, M. ; Iliadis, A.A. ; Jones, K.A. ; Wood, M.C. ; Kirchner, K.W. ; Zheleva, T.S. ; Ervin, M.H. ; Geil, B.R.

Author_Institution

ECE Dept., Maryland Univ., College Park, MD, USA

fYear

2001

fDate

2001

Firstpage

224

Lastpage

226

Abstract

The authors study the complicated ohmic contact formation process by conducting a complete microanalysis of the Ni contact containing various amounts of Si (with the Si:Ni ratios being 0:1, 1:2 and 1:1). The morphology of the annealed surface and cleaved cross sections are observed by SEM and/or AFM; the structure is studied using X-ray diffraction and TEM, and the chemistry is determined using Auger depth profiles

Keywords

Auger electron spectra; X-ray diffraction; annealing; atomic force microscopy; chemical analysis; interface structure; nickel; nickel compounds; ohmic contacts; scanning electron microscopy; silicon; silicon compounds; surface chemistry; surface topography; transmission electron microscopy; wide band gap semiconductors; AES; AFM; Auger depth profiles; SEM; SiC; SiC-Ni-Si; SiC-NiSi; TEM; X-ray diffraction; XRD; annealed surface morphology; cleaved cross sections; microanalysis; n-SiC/Ni-Si; ohmic contact formation process; Adhesives; Annealing; Contact resistance; Nickel; Ohmic contacts; Semiconductor films; Silicides; Silicon carbide; Surface morphology; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984481

Filename

984481