Title :
The oscillating electrical domains in the 6H-SiC electron unipolar structures
Author :
Sankin, V.I. ; Shkrebiy, P.P.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
The discovery of negative differential conductivity (NDC) and mobile domains due to Bloch oscillations are important results in the study of strong field transport in SiC superlattices. The presence of unusual mobile domains creating the avalanche breakdown may be a source of radiation in the 109-1012 Hz range
Keywords :
avalanche breakdown; band structure; electric domains; high field effects; semiconductor diodes; semiconductor superlattices; silicon compounds; triodes; wide band gap semiconductors; 109 to 1012 Hz; 6H-SiC; Bloch oscillations; I-V characteristics; NDC; SiC; avalanche breakdown; electron unipolar structures; miniband structure; mobile electrical domains; n+-n--n+ diode structure; n+-n--n+ triode structure; negative differential conductivity; strong field transport; superlattices; Conductivity; Diodes; Effective mass; Electrons; Frequency; Lattices; Narrowband; Scattering; Semiconductor superlattices; Silicon carbide;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984482
