Title :
Influence of isochronal annealing on the evolution of hole traps in GaAsN epilayers grown by metalorganic chemical vapor deposition
Author :
Gao, Q. ; Tan, H.H. ; Jagadish, C. ; Deenapanray, Prakash N.K.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fDate :
30 June-5 July 2002
Abstract :
The evolution of electrically active defects in rapid thermally annealed p-type GaAsN epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) was studied by deep level transient spectroscopy (DLTS). A continuous distribution of hole traps and an overlapping minority carrier trap are observed in the as-grown layers. Six hole traps HA1 (EV+0.22 eV), HA2 (EV+0.32 eV), HA3 (EV+0.38 eV), HA4 (EV+0.39 eV), HA5 (EV+0.55 eV), and HA6 (EV+0.78 eV) were created by rapid thermal annealing (RTA) in the temperature range of 600°C-900°C for 30 s. Most of these defects are stable at 900°C, although their relative concentrations varied over the RTA temperature. The origin of these hole traps was studied based on previously reported hole traps in the literature.
Keywords :
III-V semiconductors; MOCVD coatings; crystal defects; deep level transient spectroscopy; electron traps; gallium arsenide; gallium compounds; hole traps; minority carriers; rapid thermal annealing; semiconductor epitaxial layers; wide band gap semiconductors; 30 s; 600 to 900 degC; DLTS; GaAsN; MOCVD; RTA; deep level transient spectroscopy; electrically active defects; hole traps evolution; isochronal annealing; metalorganic chemical vapor deposition; overlapping minority carrier trap; p type GaAsN epitaxial layers; rapid thermal annealing; Chemical vapor deposition; Electron traps; Epitaxial layers; Gallium arsenide; MOCVD; Nitrogen; Pulse measurements; Rapid thermal annealing; Temperature distribution; Temperature measurement;
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
DOI :
10.1109/SIM.2002.1242730