Title :
Growth and fundamental properties of GeSi bulk crystals
Author_Institution :
Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
fDate :
30 June-5 July 2002
Abstract :
In this paper, we attempted the Czochralski growth of GeSi bulk crystals of large size in the whole composition range 0 < x <1and succeeded in growing full single crystals of GeSi alloys of large size within the composition ranges of 0 < x < 0.85 < x < 1 . This paper reports the current results on bulk crystal growth of GeSi alloys and on their fundamental properties that are brought about by alloying.
Keywords :
Ge-Si alloys; crystal growth from melt; electrical conductivity; semiconductor growth; semiconductor materials; stress-strain relations; yield stress; Czochralski growth; GeSi; GeSi alloys; GeSi bulk crystals; alloying; electrical properties; mechanical properties; Boron alloys; Crystalline materials; Crystals; Gallium alloys; Germanium alloys; Germanium silicon alloys; Silicon alloys; Silicon germanium; Solids; Substrates;
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
DOI :
10.1109/SIM.2002.1242731
