DocumentCode :
2256903
Title :
Optical and structural characterisation of CdTe crystals grown by physical vapour transport and Bridgman methods
Author :
Armani, N. ; Ferrari, C. ; Salviati, G. ; Bissoli, F. ; Zha, M. ; Zappettini, A. ; Zanotti, L.
Author_Institution :
IMEM Inst., CNR, Parma, Italy
fYear :
2002
fDate :
30 June-5 July 2002
Firstpage :
93
Lastpage :
96
Abstract :
The structural and optical properties of cadmium telluride crystals have been studied by means of X-ray diffraction and SEM-cathodoluminescence techniques. CdTe crystals were grown from the melt by a modified vertical Bridgman method and by physical vapour transport, from a 7N source material and without incorporation of any doping elements. The high resistivity required for the technological applications of this material was obtained only by controlling the stoichiometric ratio between Cd and Te. The crystalline quality of the samples was first checked from the FWHM of the high-resolution X-ray rocking curves. The X-ray topographies reveal an increasing defects density in the low resistivity crystals in addition to the presence of a large number of low angle grain boundaries. The low temperature luminescence spectra show the same emission bands for all the crystals studied except for the 1.4 eV band absent in the p-type Bridgman grown samples.
Keywords :
II-VI semiconductors; X-ray diffraction; X-ray topography; cadmium compounds; cathodoluminescence; electrical resistivity; grain boundaries; scanning electron microscopy; stoichiometry; CdTe; FWHM; SEM; X-ray diffraction; X-ray topography; cadmium telluride crystals; cathodoluminescence; defects density; electrical resistivity; emission bands; high-resolution X-ray rocking curves; low angle grain boundaries; luminescence spectra; optical properties; physical vapour transport; stoichiometry; structural properties; vertical Bridgman method; Cadmium compounds; Conductivity; Crystalline materials; Crystallization; Crystals; Doping; Grain boundaries; Optical diffraction; Optical materials; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
Type :
conf
DOI :
10.1109/SIM.2002.1242732
Filename :
1242732
Link To Document :
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