DocumentCode
2256974
Title
A modified PSPICE model for the power PIN diode
Author
Shaker, Ahmed ; Zekry, Abelhalim
Author_Institution
Dept. of Eng. Phys. & Math., Ain Shams Univ., Cairo, Egypt
fYear
2010
fDate
19-22 Dec. 2010
Firstpage
499
Lastpage
502
Abstract
In this paper, we present a modified approach for the modeling of power PIN diodes. The ambipolar diffusion equation (ADE) is solved numerically under various injection conditions instead of solving it under high-injection as usually encountered. The model is developed and implemented as a PSPICE subcircuit. To validate our model, comparisons between the results of the developed model with experiments are presented and very good agreement is observed.
Keywords
SPICE; diffusion; p-i-n diodes; power semiconductor diodes; semiconductor device models; PSPICE subcircuit; ambipolar diffusion equation; high injection; injection conditions; modified PSPICE model; power PIN diodes; Ambipolar Diffusion Equation (ADE); Device Simulation; Finite Difference Method (FDM); PSPICE;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics (ICM), 2010 International Conference on
Conference_Location
Cairo
Print_ISBN
978-1-61284-149-6
Type
conf
DOI
10.1109/ICM.2010.5696199
Filename
5696199
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