Title :
Luminescence properties of semi-insulating nominally-undoped CdTe crystals
Author :
Zappettini, A. ; Corregidor, V. ; Dieguez, E. ; Zha, M. ; Bissoli, F. ; Zanotti, L.
Author_Institution :
IMEM, CNR, Parma, Italy
fDate :
30 June-5 July 2002
Abstract :
CdTe crystals were grown by the vapour phase and by Bridgman method by using high purity and stoichiometry controlled source material. Nominally undoped high resistivity crystals were reproducibly obtained. A detailed photoluminescence (PL) analysis was carried out in order to investigate the compensation mechanism of the crystals. PL spectra are dominated by the bound acceptor exciton line at 1.588 eV, showing a "p" type character. A line at 1.583 eV is also present possibly due to III group impurities. A week 1.4 eV band was also revealed.
Keywords :
II-VI semiconductors; cadmium compounds; electrical resistivity; excitons; impurities; photoluminescence; Bridgman method; CdTe; CdTe crystals; III group impurities; PL; bound acceptor exciton line; compensation mechanism; photoluminescence; resistivity; stoichiometry; vapour phase; Conducting materials; Conductivity; Crystalline materials; Crystals; Luminescence; Photoluminescence; Semiconductor impurities; Semiconductor materials; Temperature measurement; X-ray detection;
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
DOI :
10.1109/SIM.2002.1242736
