Luminescence properties of semi-insulating nominally-undoped CdTe crystals

Author

Zappettini, A. ; Corregidor, V. ; Dieguez, E. ; Zha, M. ; Bissoli, F. ; Zanotti, L.

Author_Institution

IMEM, CNR, Parma, Italy

fYear

2002

fDate

30 June-5 July 2002

Firstpage

110

Lastpage

113

Abstract

CdTe crystals were grown by the vapour phase and by Bridgman method by using high purity and stoichiometry controlled source material. Nominally undoped high resistivity crystals were reproducibly obtained. A detailed photoluminescence (PL) analysis was carried out in order to investigate the compensation mechanism of the crystals. PL spectra are dominated by the bound acceptor exciton line at 1.588 eV, showing a "p" type character. A line at 1.583 eV is also present possibly due to III group impurities. A week 1.4 eV band was also revealed.

Keywords

II-VI semiconductors; cadmium compounds; electrical resistivity; excitons; impurities; photoluminescence; Bridgman method; CdTe; CdTe crystals; III group impurities; PL; bound acceptor exciton line; compensation mechanism; photoluminescence; resistivity; stoichiometry; vapour phase; Conducting materials; Conductivity; Crystalline materials; Crystals; Luminescence; Photoluminescence; Semiconductor impurities; Semiconductor materials; Temperature measurement; X-ray detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on

Print_ISBN

0-7803-7418-5

Type

conf

DOI

10.1109/SIM.2002.1242736

Filename

1242736