Plasma deposited N-doped a-SiC:H films: characterization

We present the properties of nitrogen-doped amorphous silicon carbide films that were grown by PECVD technique and annealed by a pulsed electron beam. Samples with different amounts of N were achieved by a small addition of ammonia NH₃ into the gas mixture of silane SiH₄ and methane CH₄, which were directly introduced into the reaction chamber. A simulation of the RBS spectra was used to calculate the concentration of carbon, silicon and nitrogen. The current-voltage (I-V) characteristics of diodes made of doped and irradiated SiC films grown on silicon substrates were studied.