DocumentCode :
2257018
Title :
LT (Al)GaAs and Al(Ga)As/AlAsSb oxides for electronic applications
Author :
Champlain, J. ; Zheng, C. ; Mishra, U.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear :
2002
fDate :
30 June-5 July 2002
Firstpage :
121
Lastpage :
124
Abstract :
Research into various areas of III-V electronics is presented. GaAs MESFETs passivated with LT AlxGa1-xAs showed increased breakdown voltages (Vbkd=43V) over standard devices (Vbkd=8V). MESFETs and pHEMTs fabricated with insulating oxide buffers (GaAs-On-lnsulator) produced world record power-added efficiencies (PAE=88%). Recently, research has been oriented towards collector-up with oxide current confinement layers for high gain, high speed performance.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device breakdown; 43 V; AlGaAs; AlGaAs-AlAsSb; AlGaAs/AlAsSb oxides; HEMT; MESFET; breakdown voltages; insulating oxide buffers; Annealing; FETs; Fabrication; Gallium arsenide; Insulation; MESFETs; Molecular beam epitaxial growth; Oxidation; Passivation; Temperature control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
Type :
conf
DOI :
10.1109/SIM.2002.1242738
Filename :
1242738
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2257018
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