Testing TSV-based three-dimensional stacked ICs

To meet customer´s product-quality expectations, each individual IC needs to be tested for manufacturing defects incurred during its many high-precision, and hence defect-prone manufacturing steps; these tests should be both effective and cost-efficient. The semiconductor industry is preparing itself now for three-dimensional stacked ICs (3D-SICs) based on through-silicon vias (TSVs), which, due to their many compelling benefits, are quickly gaining ground. Test solutions need to be ready for this new generation of `super chips´. 3D-SICs are chips where all basic, as well as most advanced test technologies come together. In addition, they pose some truly new test challenges with respect to complexity and cost, due to their advanced manufacturing processes and physical access limitations. This presentation focuses on the available solutions and still open challenges for testing 3D-SICs. It discusses flows for wafer-level and package-level tests, the challenges with respect to test contents and wafer-level probe access, and the on-chip Design-for-Test (DfT) infrastructure required for 3D-SICs.