Title :
Transmission coefficient enhancement in undoped Indium Arsenide by high THz field
Author :
Kaur, Gurpreet ; Han, Pengyu ; Zhang, X.-C.
Author_Institution :
Center for Terahertz Res., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We demonstrate enhancement of transmission coefficient in InAs due to THz field induced competition where intervalley scattering overcomes impact ionization. The controllable delay of THz pulse due to sample´s increased refractive index is observed.
Keywords :
III-V semiconductors; high-speed optical techniques; impact ionisation; indium compounds; refractive index; InAs; high-terahertz electric field; impact ionization; intervalley scattering; refractive index; transmission coefficient enhancement; undoped indium arsenide; Electric fields; Impact ionization; Laser excitation; Optical beams; Probes; Scattering; Silicon;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
