Title :
Modeling of GaN MESFETs at high temperature
Author :
Shashikala, B.N. ; Nagabhushana, B.S.
Author_Institution :
Siddaganga Inst. of Technol., Tumkur, India
Abstract :
The ability of Gallium Nitride (GaN) MESFET to operate over a wide temperature range requires accurate models to simulate the temperature dependence of various device parameters. In this paper, a new temperature dependent analytical model for the threshold voltage of GaN MESFETs is introduced. The contributions from various temperature dependent material parameters are taken into account in order to develop an accurate I-V model along with the effect of gate leakage current on the threshold voltage of the device. The model is further extended to predict the temperature dependence of transconductance. The model shows excellent agreement with the published experimental results for a 0.25μm device.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium compounds; leakage currents; semiconductor device models; GaN; I-V model; MESFET modeling; gallium nitride; gate leakage current; temperature-dependent analytical model; threshold voltage; transconductance; GaN; MESFET; model; threshold voltage; transconductance;
Conference_Titel :
Microelectronics (ICM), 2010 International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-61284-149-6
DOI :
10.1109/ICM.2010.5696202
