Title :
A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation
Author :
Nawaz, Muhammad ; Permthamassin, Komet ; Zaring, Carina ; Willander, Magnus
Author_Institution :
Ericsson Microelectron. AB, Stockholm, Sweden
Abstract :
Using self-consistent two dimensional numerical simulation (LASTIP), the layer structure of the laser diodes is optimized. A ridge waveguide structure with GaInAs/GaAs and GaInAs/GaInAsP active regions has been simulated. The influence of the well numbers and waveguide thicknesses on the threshold current is studied. Compared to GaInAs/GaAs, GaInAs/GaInAsP active region suffers from larger spread in the threshold current due to nonuniformities in the carrier density with increasing quantum wells. Simulations have been performed for different temperatures and at different cavity lengths
Keywords :
III-V semiconductors; SCF calculations; carrier density; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; ridge waveguides; 980 nm; GaInP-GaInAs-GaAs; GaInP/GaInAs/GaAs based 980 nm Al-free pump laser; carrier density; cavity lengths; increasing quantum wells; layer structure; ridge waveguide structure; self-consistent numerical simulation; threshold current; waveguide thicknesses; well numbers; Erbium-doped fiber lasers; Gallium arsenide; Laser excitation; Laser theory; Optical computing; Optical materials; Pump lasers; Quantum well lasers; Temperature; Threshold current;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984497
