DocumentCode
2257313
Title
Hot electron photoluminescence - new method of the investigations of semiconductors
Author
Mirlin, D.K. ; Sapega, V.F.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fYear
2001
fDate
2001
Firstpage
305
Lastpage
308
Abstract
We report the study of the effect of miniband width on polarization properties of the hot electron photoluminescence (HPL) in SLs. It is demonstrated that the energy and magnetic field dependences of the HPL polarization are very sensitive to the electron miniband widths. We show that application of tight-binding approximation for calculation of optical transitions in SLs is restricted only narrow miniband SLs
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; interface states; photoluminescence; tight-binding calculations; GaAs-AlAs; energy dependences; hot electron photoluminescence; magnetic field dependences; miniband width; optical transitions; polarization properties; tight-binding approximation; Electron optics; Gallium arsenide; Laser sintering; Magnetic fields; Optical materials; Optical polarization; Optical sensors; Photoluminescence; Quantum well devices; Solids;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984501
Filename
984501
Link To Document