Title :
Hot electron photoluminescence - new method of the investigations of semiconductors
Author :
Mirlin, D.K. ; Sapega, V.F.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
We report the study of the effect of miniband width on polarization properties of the hot electron photoluminescence (HPL) in SLs. It is demonstrated that the energy and magnetic field dependences of the HPL polarization are very sensitive to the electron miniband widths. We show that application of tight-binding approximation for calculation of optical transitions in SLs is restricted only narrow miniband SLs
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; interface states; photoluminescence; tight-binding calculations; GaAs-AlAs; energy dependences; hot electron photoluminescence; magnetic field dependences; miniband width; optical transitions; polarization properties; tight-binding approximation; Electron optics; Gallium arsenide; Laser sintering; Magnetic fields; Optical materials; Optical polarization; Optical sensors; Photoluminescence; Quantum well devices; Solids;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984501
