Title :
Esd Protection circuits with low triggering vlotage, low leakage current and fast turn-on
Author :
Koo, Yong-Seo ; Lee, Kwang-Yeob ; Lee, Hyun-Duck ; Park, Tae-Ryoung ; Kwak, Jae-chang ; Yang, Yil-Suk
Author_Institution :
Dept. of Electron. & Electr. Eng., DanKook Univ., Yongin, South Korea
Abstract :
ESD Protection circuits with low triggering voltage, low leakage current and fast turn-on using trigger techniques are presented in this paper. The proposed ESD protection devices are designed in 0.13um CMOS Technology. The results show that the proposed substrate Triggered NMOS using bipolar transistor has a lower trigger voltage of 5.98V and a faster turn-on time of 37ns. And the results show that the proposed gate-substrate triggered NMOS have lower trigger voltage of 5.35V and lower leakage current of 80pA.
Keywords :
CMOS integrated circuits; bipolar transistor circuits; electrostatic discharge; leakage currents; low-power electronics; CMOS technology; ESD protection circuits; bipolar transistor; current 80 pA; low leakage current; low triggering voltage; time 37 ns; voltage 5.35 V; voltage 5.98 V; Bipolar transistors; CMOS integrated circuits; Electrostatic discharge; Leakage current; Logic gates; MOS devices; Substrates; ESD Protection Circuit; GGNMOS; leakage current; turn on;
Conference_Titel :
Microelectronics (ICM), 2010 International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-61284-149-6
DOI :
10.1109/ICM.2010.5696214
