DocumentCode :
2257376
Title :
Leakage currents in GaAs/AlGaAs-based buried-heterostructure laser diodes with semi-insulating GaInP:Fe burying layer
Author :
Barrios, Carlos Angulo ; Lowdudoss, S.
Author_Institution :
Royal Institute of Technology (KTH)
fYear :
2002
fDate :
30 June-5 July 2002
Firstpage :
237
Lastpage :
240
Keywords :
Current measurement; Diode lasers; Gallium arsenide; Laser theory; Leakage current; Optical materials; Scanning electron microscopy; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
Type :
conf
DOI :
10.1109/SIM.2002.1242763
Filename :
1242763
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2257376
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