DocumentCode :
2257392
Title :
Formation of silicon nanoclusters in silicate matrix using an electron beam
Author :
Zamoryanskaya, M.V. ; Sokolov, V.I. ; Kaydash, A.P.
Author_Institution :
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
fYear :
2001
fDate :
2001
Firstpage :
322
Lastpage :
325
Abstract :
A high power electron beam was used for the formation of silicon nanoclusters in different silicate matrices (bulk glass, ZrSiO4 , silica gel). The evolution of silicon clusters in the silicate matrix was studied using local cathodoluminescence (CL) and measurement of the volt-ampere characteristic of the modified areas. Three stages in the formation of silicon clusters were observed in the silicon oxides and zircon. The initial stage is the appearance of radiation defects, the second stage is the formation of small silicon clusters (2-3 nm), and the last is the appearance of large silicon clusters and an "island" of crystal silicon. In silica gel, only the formation of small clusters is possible under the same conditions
Keywords :
cathodoluminescence; electron beam applications; electron beam effects; elemental semiconductors; nanostructured materials; nanotechnology; silicon; 1 to 1000 nA; 15 keV; 2 to 3 nm; 5 to 7 nm; Si; ZrSiO4; bulk glass; crystal silicon island; electron beam formation; high power electron beam; large silicon clusters; local cathodoluminescence; radiation defects; silica gel; silicate matrix; silicon nanoclusters; small silicon clusters; volt-ampere characteristic; Area measurement; Crystalline materials; Delay effects; Electron beams; Glass; Luminescence; Optical materials; Optical modulation; Optical superlattices; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
Type :
conf
DOI :
10.1109/ISDRS.2001.984505
Filename :
984505
Link To Document :
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