DocumentCode :
2257404
Title :
Photoclectronic properties of InGaAs/GaAs heterostructures with combined quantum well and self-organized quantum dot layers
Author :
Karpovich, I.A. ; Levichev, S.B. ; Baidus, N.V. ; Zvonkov, B.N. ; Filatov, D.O.
Author_Institution :
University of Nizhni Novgorod
fYear :
2002
fDate :
30 June-5 July 2002
Firstpage :
245
Lastpage :
248
Keywords :
Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Quantum dot lasers; Quantum dots; Stationary state; Surface morphology; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
Type :
conf
DOI :
10.1109/SIM.2002.1242765
Filename :
1242765
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2257404
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